English to French Tech/Engineering Patents Semiconductor device and fabrication method therefor

FIG. 15C is a diagram showing a cosmos shape as a yet still further example of the shape of the conductive post according to the embodiment of the invention;

FIG. 16C is a cross-sectional view showing the connection structure for a conductive post with a cosmos shape and the wall surface of a circular hole according to the embodiment of the invention;

Further, as shown in FIGS. 15A to 15C, shapes each having radially straight lines from the center (shapes having a plurality of blades arranged radially), such as a substantially cross shape (see FIG. 15 A, for example), a substantially regular polygonal star (see FIG. 15B, for example), and a substantially cosmos shape (see FIG. 15C, for example), are effective as the shapes of the individual surfaces. The conductive post 40 which has such a shape is favorable to be inserted into the hole 30b when the hole 30b has a simple shape such as a substantially cylindrical shape.

FIGS. 16A to 16C show the connection portions of the conductive post 40 to the hole 30b when the opening shape of the hole 30b is, for example, a circle. When the first end portion 41a whose end face shape is a regular tetragon is fitted into the hole 30b, four fixture surfaces Fl of substantially the same areas are formed, and are arranged approximately symmetrical with respect to the axis of the conductive post 40 as shown in FIG. 16A. When the end face shape of the first end portion 41a is a substantially cross shape or a substantially cosmos shape, similar fixture surfaces Fl are obtained. In case of the cosmos shape shown in FIG. 16C, however, there are eight fixture surfaces F1.

The semiconductor device characterized in that the shape of the end face of the first end portion (41a) is an ellipse, a rectangle, a regular polygon, a regular polygonal star, a cosmos shape, a cross, or a shape obtained by combining two or more thereof.