English to French Law/Patents Engineering (general) integrated circuit

This invention relates to a cell layout utilizing boundary cells with mixed poly pitch within the integrated circuit.
the polysilicon layer is further restricted to be of a uniform width and poly pitch.

the poly lines 10 in the cell Ci hâve a uniform poly pitch Pi and uniform poly line width Li. The poly pitch Pi is the combination of the poly line width Li and the spacing Si between two neighboring poly lines 10. The poly line width Li may be 20, 22, 24, or 28 nm, but not limited thereto.