English to French Tech/Engineering Electronics / Elect Eng (in a patent) SILICON CARBIDE INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME [

A silicon carbide insulating gâte type semiconductor device of the présent invention includes a semiconductor layer of a first conductivity type formed on a substrate, and having a first main face opposite to a side of a face in contact with the substrate, and an électrode and interconnection formed on the first main face. The semiconductor layer includes an active région formed so as to include the first main face, and a circumferential resurf région formed in a strip so as to surround the circumference of the active région and to include the first main face.

The circumferential resurf région is of the second conductivity type, formed to include the body région in the basic cells constituting the outermost circumference of the active région. The width of a portion of the circumferential resurf région, excluding the body région, is greater than or equal to 1/2 the thickness of at least the semiconductor layer.

According to the présent invention, the circumferential resurf région serves to alleviate the electric field concentrated at a portion of the body région located at the outermost circumference, allowing the breakdown voltage of the silicon carbide insulating gâte type semiconductor device to be improved.