Glossary entry (derived from question below)
English term or phrase:
interface state defects
Polish translation:
gęstość stanów elektronowych defektów (lub centrów rekombinacji) na interfejsie
Added to glossary by
Frank Szmulowicz, Ph. D.
Oct 6, 2023 09:45
7 mos ago
13 viewers *
English term
Poland
An Engineer with Linguistic Skills
Native in: Polish (Variant: Standard-Poland)
Works in: English to Polish
interface state defects
English to Polish
Tech/Engineering
Engineering (general)
solar panels
In addition, the second passivation layer 130 within this refractive index range may have good passivation effect, and decreased interface state defects on the front surface of the substrate 100, thereby inhibiting the recombination of carriers on the front surface of the substrate 100 and improving the photoelectric conversion rate of the solar cell.
https://worldwide.espacenet.com/patent/search/family/0782120...
https://worldwide.espacenet.com/patent/search/family/0782120...
Proposed translations
(Polish)
| 3 | gęstość stanów elektronowych defektów (lub centrów rekombinacji) na interfejsie |
Frank Szmulowicz, Ph. D.
|
Change log
Oct 11, 2023 10:46: Frank Szmulowicz, Ph. D. Created KOG entry
Proposed translations
4 hrs
Frank Szmulowicz, Ph. D.
United States
United States
Native in English
&
Polish
Works in field
United States
On time, on target, on budget.
Native in: English 
, Polish
Works in: Polish to English, English to Polish, Russian to Polish, and 1 more.
Related KudoZ points
:
1816
Selected
gęstość stanów elektronowych defektów (lub centrów rekombinacji) na interfejsie
The authors are Chinese. I strongly suspect that they have in mind the density of electronic levels introduced by defects at an interface between two materials due to lattice mismatch and growth imperfections.
Recombination occurs at electronic levels intruduced by defects. So "the defect states" refers to the electronic levels. A "defect state" captures an electon or a hole and then the carrier of the opposite sign, which leads to recombination.
c
Jak wspomniano na początku niniejszej dysertacji, spodziewane jest, że oprócz defektów związanych z matrycą ZnTe, wprowadzenie warstwy CdTe do układu spowoduje powstanie dodatkowych
defektów na interfejsie CdTe-ZnTe, ze względu na duże niedopasowanie sieciowe obydwu materiałów lub wzmocnienie tych defektów, które już występują w strukturze.
https://www.dbc.wroc.pl/Content/17840/PDF/zielony_wlasciwosc...
Recombination occurs at electronic levels intruduced by defects. So "the defect states" refers to the electronic levels. A "defect state" captures an electon or a hole and then the carrier of the opposite sign, which leads to recombination.
c
Jak wspomniano na początku niniejszej dysertacji, spodziewane jest, że oprócz defektów związanych z matrycą ZnTe, wprowadzenie warstwy CdTe do układu spowoduje powstanie dodatkowych
defektów na interfejsie CdTe-ZnTe, ze względu na duże niedopasowanie sieciowe obydwu materiałów lub wzmocnienie tych defektów, które już występują w strukturze.
https://www.dbc.wroc.pl/Content/17840/PDF/zielony_wlasciwosc...
3 KudoZ points awarded for this answer.
Comment: "Myślę, że to nie jest właściwa odpowiedź, ale dziękuję za pomoc w zgłębieniu tematu."
Discussion
— A model of interface defect states at Si/SiO2 amorphous (non-periodic) interfaces.
https://www.sciencedirect.com/science/article/abs/pii/002230...
The authors are Chinese. I strongly suspect that they have in mind the density of electronic levels introduced by defects at an interface between two materials due to lattice mismatch and growth imperfections.
Recombination occurs at electronic levels intruduced by defects. So "the defect states" refers to the electronic levels. A "defect state" captures an electon or a hole and then the carrier of the opposite sign, which leads to recombination.
https://www.sciencedirect.com/science/article/pii/S266693582...
https://www.sciencedirect.com/science/article/pii/S266693582...